Additionally, PEC eliminates the need to experimentally adjust the exposure dose for each layout thereby increasing productivity and process reproducibility. PEC is essential for improving the exposure quality by automatically adjusting exposure doses for optimum CD (critical dimension) uniformity and contrast.
Applying techniques such as “bulk & sleeve” or “coarse & fine” combined with proximity effect correction (PEC) to easily and effectively achieve high resolution, smooth edges at increased throughput. The user can instantly visualize and quickly optimize the exposure process, including field and shot position. Examples include: optimized fracturing for a significant reduction in shot placement artifacts, automated floating field to avoid /reduce field placement and stitching issues, user controlled field placement, and enhanced multi pass Interfaces for all major electron and laser-beam exposure tools are developed in close cooperation with machine vendors and are continuously optimized for the best exposure results, thereby extending the limits of these systems by advanced data preparation. It gives the user a large array of functions for extracting, combining and modifying the layout for an optimum exposure.
Electron-beam simulation of absorbed energy and resist contoursīEAMER provides reliable and highly powerful processing of large and complex layout data.Powerful proximity and process effect correction technology.Built-in Viewer for immediate inspection, verification, and measurement of patterns.Library of comprehensive layout processing functions.Writing order control and advanced writing strategies.Superior machine specific fracturing of complex curved layouts.Support for all major electron- and laser-beam exposure systems.
#Beamer 7 series software
Although the electron-beam tool is a highly sophisticated and expensive printer, the pattern data needs to be optimized to significantly reduce the effects of various error sources such as beam positioning between shapes, filling shapes with “shots” on a discrete grid, field position dependent aberrations, stitching between fields, the spread of energy by electron scattering (proximity) and process effects.īEAMER is the most comprehensive lithography software for optimum electron and laser-beam exposure: High-resolution and high-throughput electron-beam lithography is severely impacted by process effects, electron scattering effects, and tool artifacts resulting in non-ideal pattern transfer. Optimum productivity, quality and innovation by advanced data preparation for electron- and laser-beam lithography systems Electron- and Laser-Beam Lithography Software
0 kommentar(er)
